NGTB25N/NGTB40N Isolated Gate Bipolar Transistors

onsemi NGTB25N and NGTB40N Isolated Gate Bipolar Transistors (IGBT) feature a robust and cost-effective Ultra Field Stop Trench construction. Low switch losses and an ultra-fast recovery diode make them ideal for high frequency solar, UPS and inverter welder applications. Incorporated into these onsemi devices is a soft and fast co-packaged free wheeling diode with a low forward voltage.

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Qty. RoHS ECAD Model Technology
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Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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Packaging

onsemi IGBTs IGBT, Ultra Field Stop -1200V 40A
Datasheet
1.141In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.7 V - 20 V, 20 V 80 A 454 W - 55 C + 175 C NGTB40N120FL3 Tube

onsemi IGBTs IGBT, Ultra Field Stop - 1200V 25A
Datasheet
3In Stock
Min.: 1
Mult.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.7 V - 20 V, 20 V 50 A 349 W - 55 C + 175 C NGTB25N120FL3 Tube