MRF300 RF Power LDMOS Transistors

NXP Semiconductors MRF300 RF Power LDMOS Transistors feature unmatched input and output, allowing wide frequency range operation from 1.8MHz to 250MHz. NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 package, offering flexibility and ease of mounting. The rugged transistors are suitable for high VSWR industrial, scientific, and medical (ISM) applications and broadcast, mobile radio, HF/VHF communications, and switch-mode power supplies.

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Qty. RoHS ECAD Model Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Minimum Operating Temperature
Maximum Operating Temperature
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NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Datasheet
370In Stock
Min.: 1
Mult.: 1

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube
NXP Semiconductors RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V
Datasheet
Non-Stocked Lead-Time 10 Weeks
Min.: 240
Mult.: 240

N-Channel Si 30 A 133 V 1.8 MHz to 250 MHz 20.4 dB 330 W - 40 C + 150 C Through Hole TO-247-3 Tube