ADL8121 GaAs pHEMT MMIC Low Noise Amplifier

Analog Devices Inc. ADL8121 GaAs (Gallium Arsenide) pHEMT (Pseudomorphic High Electron Mobility Transistor) MMIC (Monolithic Microwave Integrated Circuit) Low Noise Amplifier operates from 0.025GHz to 12.0GHz and provides a typical gain of 16.5dB. The ADL8121 Amplifier features a low a 2.5dB typical noise figure and a typical output third-order intercept (OIP3) of 36dBm. The 21.5dBm saturated output power (PSAT) enables the device to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, in-phase and quadrature (I/Q), and image rejection mixers.

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Operating Frequency
Operating Supply Voltage
Operating Supply Current
Gain
NF - Noise Figure
Type
Mounting Style
Package/Case
Technology
P1dB - Compression Point
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Analog Devices RF Amplifier 0.1 12 GHz High Linear LNA
Datasheet
75On Order
Min.: 1
Mult.: 1

25 MHz to 12 GHz 5 V 95 mA 16.5 dB, 17 dB 2.5 dB Low Noise Amplifiers SMD/SMT LFCSP-6 GaAs 17 dBm, 21 dBm 34 dBm, 36 dBm - 40 C + 85 C ADL8121 Cut Tape
Analog Devices RF Amplifier 0.1 12 GHz High Linear LNA
Datasheet
Non-Stocked Lead-Time 11 Weeks
Min.: 3.000
Mult.: 3.000
Reel: 3.000

25 MHz to 12 GHz 5 V 95 mA 16.5 dB, 17 dB 2.5 dB Low Noise Amplifiers SMD/SMT LFCSP-6 GaAs 17 dBm, 21 dBm 34 dBm, 36 dBm - 40 C + 85 C ADL8121 Reel