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Alliance Memory P30 Micron Parallel NOR Flash Embedded Memory

Alliance Memory P30 Micron Parallel NOR Flash Embedded Memories offer more density in less space, high-speed interface device, and support for code and data storage. These memory devices feature high-performance synchronous-burst read mode, fast asynchronous access times, low power, flexible security options, and three industry-standard package choices. The P30 NOR flash embedded memory devices provide high performance at the low voltage on a 16-bit data bus. The individually erasable memory blocks are sized for optimum code and data storage. These memory devices' security features include 64 OTP bits one-time programmable register that is programmed with unique information from Micron. The P30 NOR flash embedded memory devices are JESD47 compliant and are available in a 56-lead TSOP (512Mb, 1Gb) and 64-ball Easy BGA package (512Mb, 1Gb, 2Gb). 

Features

  • High performance
  • Easy BGA package features:
    • 100ns initial access for 512Mb and 1Gb Easy BGA
    • 105ns initial access for 2Gb Easy BGA
    • 25ns 16-word asynchronous page read mode
    • 52MHz (Easy BGA) with zero WAIT states and 17ns clock-to-data output synchronous burst read mode
    • 4-, 8-, 16-, and continuous word options for burst mode
  • TSOP package features:
    • 110ns initial access for 512Mb and 1Gb TSOP
  • Both Easy BGA and TSOP package features:
    • Buffered Enhanced Factory Programming (BEFP) at 2MB/s (typical) using a 512-word buffer
    • 1.8V buffered programming at 1.46MB/s (typical) using a 512-word buffer
  • Architecture:
    • Highest density MLC at lowest cost
    • Symmetrically blocked architecture (512Mb, 1Gb, and 2Gb)
    • Asymmetrically blocked architecture (512Mb and 1Gb)
    • Four 32KB parameter blocks ( top or bottom configuration)
    • 128KB main blocks
    • Blank check to verify an erased block
  • Top boot and bottom boot block configuration
  • 16-bit wide data bus
  • Security:
    • One-time programmable register:
      • 64 OTP bits, programmed with unique information from Micron; 2112 OTP bits available for customer programming
    • VPP = VSS absolute write protection
    • Power-transition erase/program lockout
    • Individual zero-latency block locking
    • Individual block lock-down
    • Password access
  • Software:
    • 25μs (typical) program suspend
    • 25μs (typical) erase suspend
    • Flash data integrator optimized
    • Basic command set and Extended Function Interface (EFI) command set compatible
    • Common flash interface
  • Density and packaging:
    • 56-lead TSOP package (512Mb and 1Gb)
    • 64-ball Easy BGA package (512Mb, 1Gb, and 2Gb)

Specifications

  • Voltage and power:
  • 1.7V to 2V VCC (core) voltage
  • 1.7V to 3.6V VCCQ (I/O) voltage
  • 70µA (typical) for 512Mb and 75µA (typical) for 1Gb standby current
  • 52MHz continuous synchronous read current:
    • 21mA (typical) and 24mA (maximum)
  • Quality and reliability:
    • JESD47 compliant
    • -40°C to 85°C operating temperature range
    • Minimum 100,000 ERASE cycles per block
    • 65nm process technology

Easy BGA Block Diagram

Block Diagram - Alliance Memory P30 Micron Parallel NOR Flash Embedded Memory
Published: 2020-12-09 | Updated: 2022-03-11